Spin current and polarization in impure 2D electron systems with spin-orbit coupling

We derive the transport equations for two-dimensional electron systems with spin-orbit interaction and short-range spin-independent disorder. In the limit of slow spatial variations of the electron distribution we obtain coupled diffusion equations for the electron density and spin. Using these equations we calculate electric-field induced spin accumulation in a finite-size sample for arbitrary ratio between spin-orbit energy splitting and elastic scattering rate. We demonstrate that the spin-Hall conductivity vanishes in an infinite system independent of this ratio.Comment: 5 pages, 1 figure; revised version according to referee's commment

Andreev Reflection and Spin Injection into s−s- and d−d-wave Superconductors

We study the effect of spin injection into $s-$ and $d-$wave superconductors, with an emphasis on the interplay between boundary and bulk spin transport properties. The quantities of interest include the amount of non-equilibrium magnetization ($m$), as well as the induced spin-dependent current ($I_s$) and boundary voltage ($V_s$). In general, the Andreev reflection makes each of the three quantities depend on a different combination of the boundary and bulk contributions. The situation simplifies either for half-metallic ferromagnets or in the strong barrier limit, where both $V_s$ and $m$ depend solely on the bulk spin transport/relaxation properties. The implications of our results for the on-going spin injection experiments in high $T_c$ cuprates are discussed.Comment: 4 pages, REVTEX, 1 figure included; typos correcte

Spin-orbit interaction in three-dimensionally bounded semiconductor nanostructures

The structural inversion asymmetry-induced spin-orbit interaction of conduction band electrons in zinc-blende and wurtzite semiconductor structures is analysed allowing for a three-dimensional (3D) character of the external electric field and variation of the chemical composition. The interaction, taking into account all remote bands perturbatively, is presented with two contributions: a heterointerface term and a term caused by the external electric field. They have generally comparable strength and can be written in a unified manner only for 2D systems, where they can partially cancel each other. For quantum wires and dots composed of wurtzite semiconductors new terms appear, absent in zinc-blende structures, which acquire the standard Rashba form in 2D systems.Comment: 18 pages, 1 figur

Spin Injection into a Luttinger Liquid

We study the effect of spin injection into a Luttinger liquid. The spin-injection-detection setup of Johnson and Silsbee is considered; here spins injected into the Luttinger liquid induce, across an interface with a ferromagnetic metal, either a spin-dependent current ($I_s$) or a spin-dependent boundary voltage ($V_s$). We find that the spin-charge separation nature of the Luttinger liquid affects $I_s$ and $V_s$ in a very different fashion. In particular, in the Ohmic regime, $V_s$ depends on the spin transport properties of the Luttinger liquid in essentially the same way as it would in the case of a Fermi liquid. The implications of our results for the spin-injection-detection experiments in the high $T_c$ cuprates are discussed.Comment: 4 pages, REVTEX, 2 figures. Minor changes and corrections to typos. To appear in Phys. Rev. Let

Extracting current-induced spins: spin boundary conditions at narrow Hall contacts

We consider the possibility to extract spins that are generated by an electric current in a two-dimensional electron gas with Rashba-Dresselhaus spin-orbit interaction (R2DEG) in the Hall geometry. To this end, we discuss boundary conditions for the spin accumulations between a spin-orbit coupled region and contact without spin-orbit coupling, i.e. a normal two-dimensional electron gas (2DEG). We demonstrate that in contrast to contacts that extend along the whole sample, a spin accumulation can diffuse into the normal region through finite contacts and detected by e.g. ferromagnets. For an impedance-matched narrow contact the spin accumulation in the 2DEG is equal to the current induced spin accumulation in the bulk of R2DEG up to a geometry-dependent numerical factor.Comment: 18 pages, 7 figures, submitted to NJP focus issue on Spintronic

Spin-Imbalance and Magnetoresistance in Ferromagnet/Superconductor/Ferromagnet Double Tunnel Junctions

We theoretically study the spin-dependent transport in a ferromagnet/super- conductor/ferromagnet double tunnel junction. The tunneling current in the antiferromagnetic alignment of the magnetizations gives rise to a spin imbalance in the superconductor. The resulting nonequilibrium spin density strongly suppresses the superconductivity with increase of bias voltage and destroys it at a critical voltage Vc. The results provide a new method not only for measuring the spin polarization of ferromagnets but also for controlling superconductivity and tunnel magnetoresistance (TMR) by applying the bias voltage.Comment: 4pages, to be published in Phys. Rev. Let

Electric-field control of magnetic domain wall motion and local magnetization reversal

Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has potential advantages including enhanced functionality and low power consumption. Here, we report on an approach to electrically control local magnetic properties, including the writing and erasure of regular ferromagnetic domain patterns and the motion of magnetic domain walls, in multiferroic CoFe-BaTiO3 heterostructures. Our method is based on recurrent strain transfer from ferroelastic domains in ferroelectric media to continuous magnetostrictive films with negligible magnetocrystalline anisotropy. Optical polarization microscopy of both ferromagnetic and ferroelectric domain structures reveals that domain correlations and strong inter-ferroic domain wall pinning persist in an applied electric field. This leads to an unprecedented electric controllability over the ferromagnetic microstructure, an accomplishment that produces giant magnetoelectric coupling effects and opens the way to multiferroic spintronic devices.Comment: 6 pages, 4 figure

Semiconductor Spintronics

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent nteraction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field.Comment: tutorial review; 342 pages, 132 figure